Electrical and Photoelectrical Properties of n-CuInS2 Single Crystals

The temperature dependences of free electron density and mobility in n-CuInS₂ single crystals have been determined from the Hall effect measurements. The ionization energy of donors and their densities have been estimated. The results of measurements show that the crystals are strongly compensated. The spectral distribution of photoconductivity, the dependence of photoconductivity on excitation intensity, and the photoconductivity decay with time have been measured in the n-CuInS₂ crystals at different temperatures. The results of photo-conductivity measurements suggest linear recombination of photo-electrons at weak excitation and quadratic recombination at high excitation intensity. The compensated deep acceptor probably acts as the recombination centre.