上海光源增强器动态升能过程分析

上海光源增强器采用FODO型磁聚焦结构, 由28个FODO单元组成, 周长180m, 可将直线加速器引出的100MeV的电子束加速至3.5GeV, 用于储存环的注入, 重复频率为2Hz. 增强器的动态升能过程将直接影响到储存环的注入效率. 报告上海光源增强器动态升能过程中磁铁磁场、高频电压的上升过程、涡流效应及影响以及束流参数的变化等.

Analysis of the Ramping Process of the SSRF Booster

The booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100MeV to 3.5GeV in 250ms, with a repetition frequency of 2Hz. Its circumference is 180m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc.