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Magnetotransport and magnetic properties of InAs/Mn digital alloys |
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| Authors: | G Acbas G B Kim X Chen S Wang M Cheon C J Meining H Luo B D McCombe Y Sasaki X Liu J K Furdyna |
| Institution: | a Department of Physics and Center for Advanced Photonic and Electronic Materials, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;b Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA |
| Abstract: | We have investigated the magnetic and magneto-transport properties of a systematic sequence of five InAs/Mn digital alloys grown by a combination of molecular beam epitaxy and atomic layer epitaxy. The samples consist of 30 periods of Mn fractional monolayers (ML) (0.17–0.5 ML) separated by 14 ML thick InAs spacer layers in a superlattice configuration. Four samples show n-type electrical conduction while the fifth (0.25 ML Mn) is p-type. Squid magnetization measurements performed on these samples show remnant magnetization above room temperature, which is apparently related to a second phase. |
| Keywords: | Ferromagnetic Spintronics InAs/Mn digital alloys Magnetotransport |
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