Energy and mass dependence of isotopic enrichment in sputtering |
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Authors: | V Shutthanandan J Zhang P Ray |
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Institution: | (1) College of Engineering, Architecture and Physical Sciences, 526 Engineering Building, Tuskegee University, Tuskegee, AL 36 088, USA, US |
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Abstract: | Silver, copper, and boron (from a boron nitride target) were sputtered with xenon ions. The isotopic composition of secondary
ions of silver was measured at ion energies ranging from 300 eV to 3 keV and, for copper and boron, at 2.0, 2.5, and 3.0 keV.
An ion gun was used to generate the ion beam. The secondary ions were detected at a small emission angle by a quadrupole mass
spectrometer. The secondary-ion flux of silver was found to be enriched in heavy isotopes at lower incident-ion energies.
The heavy-isotope enrichment was observed to decrease with increasing primary-ion energy. Beyond 500 eV, light isotopes of
silver were sputtered preferentially with the enrichment increasing to a constant value of 1.018. The sputtered flux of copper
and boron also indicated constant enrichments (1.008 and 1.281 for copper and boron respectively) in light isotopes at high
ion energies.
Received: 2 August 2002 / Accepted 9 August 2002: / Published online: 4 December 2002
RID="*"
ID="*"Present address: Pacific Northwest National Laboratory, Richland, WA 99 352, USA
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ID="**"Present address: Philips Display Components Company, Ottawa, OH 45 875 USA
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ID="***"Corresponding author. Fax: +1-334/727-8090, E-mail: pkray@tusk.edu |
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Keywords: | PACS: 79 20 Rf |
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