首页 | 本学科首页   官方微博 | 高级检索  
     检索      

硅MIS/IL太阳电池反型层 薄层电阻的精确算法
引用本文:张秀淼.硅MIS/IL太阳电池反型层 薄层电阻的精确算法[J].浙江大学学报(理学版),1991,18(1):42-46.
作者姓名:张秀淼
作者单位:杭州大学电子工程系
摘    要:本文提出了一种直接求解泊松方程计算MIS/IL太阳电池的反型层薄层电阻的方法.这种方法既不采用耗尽近似,也不忽略反型电荷对电势的影响,因而它是精确的.文中通过计算实例比较了这种精确算法与耗尽近似计算方法的结果,并进行了讨论

关 键 词:太阳能电池  薄层电阻  电阻  反型层

An Exact Method to Calculate the Sheet Resistance of Inversion Layer in Silicon MIS/IL Solar Cells
Zhang Xiumiao.An Exact Method to Calculate the Sheet Resistance of Inversion Layer in Silicon MIS/IL Solar Cells[J].Journal of Zhejiang University(Sciences Edition),1991,18(1):42-46.
Authors:Zhang Xiumiao
Institution:Dept. of Electronic Engineering
Abstract:A method to calculate the sheet resistance of inversion layer in silicon MIS/IL solar cells by directly resolving Poission's equation has been presented. As the method does not make depletion approximation nor ignores the influence of inversion layer charge on electric potential, it is thus exact. Through a practical example, the comparison between the results of this method and those of the depletion approximation method has been made.
Keywords:solar cell  sheet resistance  inversion layer
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《浙江大学学报(理学版)》浏览原始摘要信息
点击此处可从《浙江大学学报(理学版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号