Mutual spontaneous and electrosurface processes at heterophase interfaces WO3|Me2(WO4)3 (Me = In,Eu, Sc)

For the first time ever it is demonstrated in this work that, in spontaneous conditions and following the imposition of an electric field, mutual penetration of components of WO₃ and Me₂(WO₄)₃ occurs at heterophase interfaces WO₃|Me₂(WO₄)₃ where Me = In, Eu, or Sc. Tungstic oxide WO₃ is pulled onto the inner surface of ceramic Me₂(WO₄)₃ and, in turn, components of Me₂(WO₄)₃ penetrate onto the surface of grains of ceramic WO₃, which is confirmed by the method of x-ray—fluorescence analysis. Data concerning the conductivity and transport numbers of Eu₂(WO₄)₃ and a composite on its basis, which was manufactured as a result the electrosurface transport of WO₃, are obtained for the first time ever. With allowance made for the data on the O_2? character of the ionic conduction in MeWO₄ and Eu₂(WO₄)₃ it is concluded that the type of ionic carriers in tungstates (Me ⁿ⁺)_2/n [WO₄] makes no impact on the mechanism of spontaneous and field-induced processes that are developing at the (Me ⁿ⁺)_2/n [WO₄]|WO₃ interfaces.