Role of Pr segregation in acceptor-state formation at ZnO grain boundaries |
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Authors: | Sato Yukio Buban James P Mizoguchi Teruyasu Shibata Naoya Yodogawa Masatada Yamamoto Takahisa Ikuhara Yuichi |
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Institution: | Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan. |
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Abstract: | The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO. |
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