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Interface effects in spin-polarized metal/insulator layered structures
Authors:J.P. Velev   P.A. Dowben   E.Y. Tsymbal   S.J. Jenkins  A.N. Caruso
Affiliation:aDepartment of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA;bDepartment of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom;cDepartment of Physics, University of Missouri, Kansas City, MO 64110, USA
Abstract:
Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.
Keywords:Magnetic tunnel junctions   Interface states   Spin polarization   Multiferroics
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