| High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth |
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| 引用本文： | 黄社松,牛智川,詹锋,倪海桥,赵欢,吴东海,孙征. High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth[J]. 中国物理 B, 2008, 17(1): 323-327 |
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| 作者姓名： | 黄社松 牛智川 詹锋 倪海桥 赵欢 吴东海 孙征 |
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| 作者单位： | State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China;State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China;The Key Laboratory of Beam Technology and MaterialModification of Ministry of Education,Beijing Normal University,Beijing 100875, China;State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China;State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China;State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China;State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China |
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| 基金项目： | Project supported by the NationalNatural Science Foundation of China (Grant No 60625405), and theSpecial Foundation for State Major Basic Research Program of China(Grant No 2006CB921504). |
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| 摘 要： | ![]()
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| 关 键 词： | 分子束外延 量子点 两步生长 量子学 |
| 收稿时间： | 2007-04-10 |
| 修稿时间： | 2007-07-04 |
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth |
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| Huang She-Song,Niu Zhi-Chuan,Zhan Feng,Ni Hai-Qiao,Zhao Huan,Wu Dong-Hai and Sun Zheng. High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth[J]. Chinese Physics B, 2008, 17(1): 323-327 |
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| Authors: | Huang She-Song Niu Zhi-Chuan Zhan Feng Ni Hai-Qiao Zhao Huan Wu Dong-Hai Sun Zheng |
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| Affiliation: | State Key Laboratory for Superlattices andMicrostructures, Institute of Semiconductors,Chinese Academy ofSciences, Beijing 100083, China; The Key Laboratory of Beam Technology and MaterialModification of Ministry of Education,Beijing Normal University,Beijing 100875, China |
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| Abstract: | ![]()
We develop a modified two-step method of growing high-density andnarrow size-distribution InAs/GaAs quantum dots (QDs) by molecularbeam epitaxy. In the first step, high-density small InAs QDs areformed by optimizing the continuous deposition amount. In the secondstep, deposition is carried out with a long growth interruption forevery 0.1 InAs monolayer. Atomic force microscope images show thatthe high-density ($sim $5.9$times $10$^{10}$,cm$^{ - 2})$ goodsize-uniformity InAs QDs are achieved. The strong intensity andnarrow linewidth (27.7,meV) of the photoluminescence spectrum showthat the QDs grown in this two-step method have a good opticalquality. |
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| Keywords: | molecular beam epitaxy quantumdots a modified two-step growth |
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