Influence of the charge of surface states on the characteristics of mis transistors made of p-type indium antimonide

An experimental investigation was made of metal-insulator-semiconductor transistors with thick insulator and long channel and made of single-crystal p-type InSb (78° K). An empirical relation was obtained for the output drain conductance in the case of carrier degeneracy in the n-type channel. The parameters of the InSb surface after etching were determined.Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 4, pp. 84–88, April, 1980.