| 分子束外延生长的n-Hg1-xCdxTe的磁输运特性 |
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| 引用本文： | 桂永胜,郑国珍,褚君浩,郭少令,汤定元.分子束外延生长的n-Hg1-xCdxTe的磁输运特性[J].物理学报,1997,46(8):1631-1635. |
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| 作者姓名： | 桂永胜 郑国珍 褚君浩 郭少令 汤定元 |
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| 作者单位： | 中国科学院红外物理国家重点实验室 |
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| 摘 要： | 采用迁移率谱和多电子拟合过程相结合的混合电导分析法，对分子束外延（MBE）生长的Hg1-xCdxTe材料的变磁场实验数据进行了处理．该方法可以将外延层中体电子对电导的贡献与界面电子的贡献区分开，通过对不同温度下变磁场数据的分析，表明该方法是准确和可靠的，可以成为一种半导体材料和器件的常规电学测试和分析手段
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| 关 键 词： | 磁输运 分子束外延生长 汞镉碲 半导体 |
| 收稿时间： | 1996-10-08 |
MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe |
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| GUI YONG-SHENG,ZHENG GUO-ZHEN,CHU JUN-HAO,GUO SHAO-LING and TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe[J].Acta Physica Sinica,1997,46(8):1631-1635. |
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| Authors: | GUI YONG-SHENG ZHENG GUO-ZHEN CHU JUN-HAO GUO SHAO-LING and TANG DING-YUAN |
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| Abstract: | A hybrid conduction analysis method mixed with multi carrier fitting procedure and mobility spectrum is present to analyze the experimental Hall and resistivity data of MBE grown Hg1-xCdxTe samples as a function of magnetic field.This method enables the conductivity contribution of bulk electron to separated from that of interface electron.Applications to temperature dependent Hall and resistivity data confirm that the procedure may be regarded accurate and reliable one.The method seems to be a suitable tool for the routine electrical characterization of semiconductor materials and devices. |
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