磁控溅射法制备的高反Ag_5In_5Te_(47)Sb_(33)相变薄膜的光谱性质及短波长静态记录性能

研究了磁控溅射制备的Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜的光谱及短波长静态记录性能。研究结果表明，晶态薄膜反射率较高，并在６００～９００ｎｍ波长范围内，晶态与非晶态的反射率和折射率相差很大。在ＣＤ－Ｅ系统的工作波长７８０ｎｍ处，晶态反射率高达５０％，光学常数为５．３４－１．０ｉ；非晶态反射率为２３％，光学常数为２．５－１．０３ｉ。从这一角度讲，Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜适于做ＣＤ－Ｅ系统的记录介质。另外，采用波长为５１４．４ｎｍ的短波长光学静态记录测试仪对Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３薄膜的记录性能进行了测试，结果表明，这种薄膜短波长记录性能较好，它在较低功率和短脉宽的激光束作用下就可得到较高的反射率对比度。

Optical Spectral Properties and Short Wavelength Optical Storage Properties of High Reflection Ag 5In 5Te 47 Sb 37 Phase Change Films Prepared by RF Magnetron Sputtering Technology

The optical spectra properties and short wavelength optical storage properties of Ag 5In 5Te 47 Sb 33 films are reported. The films are prepared by RF magnetron sputtering technology. The reflection of the crystalline film is 50% at 780 nm, and the difference of the reflection and reflectivity index is very large in the range of 600 nm to 900 nm, which shows the profitable characteristics as the recording layer for high reflection CD E system. The film also shows good recording properties at short wavelength (514.5 nm). A high reflectivity, larger than 15%, can be obtained with low power (11.5 mW) and short width (300 ns) laser beam.