| 氮化铝晶须的形态与生长条件的关系 |
| |
| 引用本文： | 鲁枫,郑瑞生,刘文,敬守勇,武红磊,孙秀明. 氮化铝晶须的形态与生长条件的关系[J]. 人工晶体学报, 2006, 35(2): 381-384,403 |
| |
| 作者姓名： | 鲁枫 郑瑞生 刘文 敬守勇 武红磊 孙秀明 |
| |
| 作者单位： | 深圳大学 |
| |
| 基金项目： | 国家自然科学基金(No.60376003)，教育部科学研究重点项目([2005]3号)，广东省自然科学基金(No.04011297) |
| |
| 摘 要： | 实验以氮化铝粉料为原料,在高纯氮气气氛下用物理气相法在密闭式和半开式钨坩锅内高温生长出氮化铝晶须;并对氮化铝晶须的结晶形态与生长条件的关系进行了分析和探讨。
|
| 关 键 词： | 氮化铝 晶须 物理气相法 |
| 文章编号： | 1000-985X（2006）02-0381-04 |
| 收稿时间： | 2005-09-25 |
| 修稿时间： | 2005-09-25 |
Relationship between the Morphology and the Growth Conditions of Aluminum Nitride Whiskers |
| |
| LU Feng,ZHENG Rui-sheng,LIU Wen,JING Shou-yong,WU Hong-lei,SUN Xiu-ming. Relationship between the Morphology and the Growth Conditions of Aluminum Nitride Whiskers[J]. Journal of Synthetic Crystals, 2006, 35(2): 381-384,403 |
| |
| Authors: | LU Feng ZHENG Rui-sheng LIU Wen JING Shou-yong WU Hong-lei SUN Xiu-ming |
| |
| Affiliation: | 1. Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China; 2, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen 518060, China; 3. Key Laboratory of Optoelectronic Devices and Systems of Guangdong Province, Shenzhen 518060, China |
| |
| Abstract: | AlN whiskers were grown from AlN powder source by physical vapor transport under the pure nitrogen atmosphere condition.Tungsten crucibles with airtight or a cover slightly ajar were used in the experiments for the comparison.The relationship between the morphology of the AlN whiskers and the growth condition was studied. |
| |
| Keywords: | aluminum nitride whiskers physical vapor transport |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
