Photoluminescence properties of Tb in porous silicon |
| |
| Authors: | H Elhouichet A MoadhenM Oueslati M Férid |
| |
| Institution: | a Departement de Physique, Laboratoire de Spectroscopie Raman, Faculté des sciences de Tunis, 1060 Tunis, Tunisiab Institut National de Recherche Scientifique et Technique, B.P.95, Hammam-Lif 2050, Tunisia |
| |
| Abstract: | Terbium (Tb3+)/porous silicon (PS) nanocomposites have been formed by impregnation of PS layer in chloride solution of terbium. Complete and uniform penetration of Tb3+ into PS layer is confirmed by Rutherford backscattering spectrometry (RBS) study. Photoluminescence (PL) spectrum shows that Tb3+ ions emit highly in the green region, while the PL band of PS is quenched. The emission of Tb3+ ions depends strongly on the excitation energy and shows a high efficiency at 488 nm corresponding to the maximum absorption band in terbium. A systematic study of the PL versus annealing temperature was performed. It shows an important improvement of the PL intensity for 700°C temperature annealing. |
| |
| Keywords: | Tb3+ Silicon Rare earth |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
