| Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method |
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| 引用本文： | 李新华 徐家跃 金敏 申慧 李效民. Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method[J]. 中国物理快报, 2006, 23(12): 3356-3358 |
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| 作者姓名： | 李新华 徐家跃 金敏 申慧 李效民 |
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| 作者单位： | [1]Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50372076. |
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| 摘 要： | Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.
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| 关 键 词： | ZnO单晶 垂直布里奇曼法 晶体生长 电学性质 光学性质 |
| 收稿时间： | 2006-08-29 |
| 修稿时间： | 2006-08-29 |
Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method |
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| LI Xin-Hua,XU Jia-Yue,JIN Min,SHEN Hui,LI Xiao-Min. Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method[J]. Chinese Physics Letters, 2006, 23(12): 3356-3358 |
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| Authors: | LI Xin-Hua XU Jia-Yue JIN Min SHEN Hui LI Xiao-Min |
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| Affiliation: | ¹Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 ²Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Abstract: | |
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| Keywords: | 77.84.Bw 78.55.-m 81.05.Dz 81.10.Dn |
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