| 量子阱结构对有机电致发光器件效率的影响 |
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| 引用本文： | 朱海娜,徐征,赵谡玲,张福俊,孔超,闫光,龚伟.量子阱结构对有机电致发光器件效率的影响[J].物理学报,2010,59(11):8093-8097. |
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| 作者姓名： | 朱海娜 徐征 赵谡玲 张福俊 孔超 闫光 龚伟 |
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| 作者单位： | 北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京 100044 |
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| 基金项目： | 国家自然科学基金(批准号:60978060,10774013,10804006,10974013),教育部博士点基金(批准号:20070004024),博士点新教师基金(批准号:20070004031),国家重点基础研究发展计划(批准号:2010CB327704), 北京市自然科学基金(批准号:1102028), 北京市科技新星计划(批准号:2007A024) 资助的课题. |
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| 摘 要： | 实验中共制备了五种有机量子阱结构电致发光器件,分别对这五种量子阱结构器件的电致发光特性进行了研究,分析了量子阱结构的周期数和势垒层的厚度对器件电学性能的影响.实验结果表明适当周期数的量子阱结构器件的亮度和电流效率比传统的三层结构器件的要大,主要原因是量子阱结构对电子和空穴的限制作用,这种限制作用提高了电子和空穴在发光层中形成激子和复合的概率,从而提高了发光的亮度和效率.当改变阱结构器件中势阱层的厚度时,也会对器件的亮度和效率产生影响,采用适当的势阱层厚度能够提高器件的亮度和效率.
关键词：
量子阱结构
电致发光
电流效率
光谱
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| 关 键 词： | 量子阱结构 电致发光 电流效率 光谱 |
| 收稿时间： | 1/2/2010 12:00:00 AM |
Influence of well structure on efficiency of organic light-emitting diodes |
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| Zhu Hai-Na,Xu Zheng,Zhao Su-Ling,Zhang Fu-Jun,Kong Chao,Yan Guang,Gong Wei.Influence of well structure on efficiency of organic light-emitting diodes[J].Acta Physica Sinica,2010,59(11):8093-8097. |
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| Authors: | Zhu Hai-Na Xu Zheng Zhao Su-Ling Zhang Fu-Jun Kong Chao Yan Guang Gong Wei |
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| Institution: | Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China |
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| Abstract: | Five kinds of organic quantum well structured light-emitting devices are fabricated, and their electrical characteristics are studied. The effects of quantum well period number and barrier thickness on device performance are analyzed. Experimental results show that appropriate cycle quantum well structured devices have higher brightness and current efficiency than the traditional three-layer devices. That is because of the limitation effect of quantum well structure on electrons and holes,and the structure of this kind could improve the composite probability of excitons in the light-emitting layer,thereby increasing brightness and efficiency of OLED. There is also an effect on brightness and efficiency when the potential well layer thickness of quantum well structured device is changed. Consequently,the adoption of appropriate potential well layer thickness can also improve the brightness and the efficiency of the device. |
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| Keywords: | quantum well structure electroluminescence current efficiency spectra |
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