Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers

Spatial inhomogeneities of the indium distribution in In _x Ga_1–x N epitaxial layers grown on sapphire substrate with a GaN buffer layer were investigated using photoluminescence (PL) in addition to confocal scanning Raman spectroscopy (RS) and PL. Broad emission bands from In-enriched InGaN nanoclusters (700–900 nm) and from the volume outside the clusters (about 460 nm) were observed in PL spectra of an epitaxial InGaN layer with an average In content of 25.7%. It was established that larger micro-PL intensities corresponded to energetically shallower clusters. The observed broadly asymmetric A₁(LO) RS band of InGaN confirmed that the In concentration in the layer was highly variable. Modeling the LO phonon band by two Lorentzian curves gave an average In concentration of 21% in the volume outside the clusters and 37% in the nanoclusters, which was considerably higher than the average concentration in the layer and agreed well with their PL band positions.