驱动激光对砷化镓阴极材料的损伤阈值

砷化镓作为优秀的光电发射材料，被广泛应用于制备阴极材料。砷化镓通常用到的驱动激光是532 nm连续波激光，在相同平均功率的情况下比纳秒脉冲激光的峰值功率低很多，因此在有某些超大电荷量的需求时，就不能避免使用高峰值功率激光照射。所以在砷化镓阴极的使用过程中，需要对其损伤阈值进行测量。基于上述背景，首先通过数值计算得到砷化镓材料的激光损伤阈值，再通过软件模拟加以验证，最后结合实验分析比较其差异。其中数值计算结果为17.811 MW/cm2，模拟结果为19 MW/cm2，而实验结果为13.5 MW/cm2。经过合理的分析，认为砷化镓在作为光阴极材料时的损伤阈值会进一步降低。

Damage threshold of GaAs cathode material by driving laser

As an excellent photoemission material, GaAs is widely used to prepare cathode materials.Gallium arsenide is usually driven by 532 nm CW laser, which has much lower peak power than the nanosecond pulsed laser at the same average power. Therefore, high peak power laser irradiation can not be avoided when there is a need for some supercharges. Therefore, in the process of using GaAs cathode, it is necessary to measure its damage threshold.Based on the above background, the laser damage threshold of GaAs material is first obtained by calculation, then verified by software simulation. Finally, the difference is analyzed and compared with the experimental results. The numerical result is 17.811 MW/cm2, the simulation result is 19 MW/cm2, and the experimental result is 13.5 MW/cm2. After reasonable analysis, it is believed that the damage threshold of GaAs as photocathode material will be further reduced.