Electronic structure of ultrathin Cs coatings on a Si(100)2×1 surface

The electronic structure and ionization energy of submonolayer Cs coatings on a Si(100)2×1 surface is investigated by threshold photo-emission spectroscopy. Two surface bands induced by Cs adsorption are observed, and their evolution is studied as a function of coverage. It is found that there are two “adsorption locations” for Cs atoms, where they interact with active dangling bonds at the surface. It has been determined that the Cs/Si(100)2×1 interface is semiconducting all the way down to monolayer coverage. The results show that Cs adsorption is predominantly of a covalent character. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 9, 699–702 (10 May 1997)