首页 | 本学科首页   官方微博 | 高级检索  
     检索      

氟化硼碳平面的第一性原理研究
引用本文:徐雷,戴振宏,王森,刘兵,孙玉明,王伟田.氟化硼碳平面的第一性原理研究[J].物理学报,2014,63(10):107102-107102.
作者姓名:徐雷  戴振宏  王森  刘兵  孙玉明  王伟田
作者单位:烟台大学光电信息科学技术学院, 烟台 264005
基金项目:教育部新世纪优秀人才支持计划(批准号:NCET-09-0867)资助的课题~~
摘    要:基于第一性原理的理论计算,研究了不同氟化程度的BC3,BC5,BC7的稳定结构和电子特征,发现通过B原子替代C原子,F原子与平面结构的结合能力更强了,氟化的硼碳结构比氢化的硼碳结构更加稳定.研究发现:当只有C原子与F原子成键时,体系变成半导体,而当B原子与F原子成键时,即所有原子都与F原子成键,体系变成导体.通过不同程度的氟化,BC3发生半导体-金属的转变,BC5和BC7发生金属-半导体-金属的转变.理论分析表明,B原子的pz轨道对电学性质变化有较大影响.由于其丰富的电学特性,此类氟化硼碳平面在纳米电子器件领域中具有潜在应用,并且该结果对实验合成也有一定的指导意义.

关 键 词:第一性原理  硼碳平面  电子性质
收稿时间:2014-01-04

First principles study of fluorinated boron-carbon sheets
Xu Lei,Dai Zhen-Hong,Wang Sen,Liu Bing,Sun Yu-Ming,Wang Wei-Tian.First principles study of fluorinated boron-carbon sheets[J].Acta Physica Sinica,2014,63(10):107102-107102.
Authors:Xu Lei  Dai Zhen-Hong  Wang Sen  Liu Bing  Sun Yu-Ming  Wang Wei-Tian
Abstract:Based on the first principles, we investigate the structures and electronic properties of fluorinated BC3, BC5, and BC7. Through the fluorination of BC structure, boron-carbon sheets are more stable than the hydrogenation. The results show that the system becomes semiconductor only on condition that the boron atoms can be bonded with the carbon atoms, whereas, the whole system will become the conductor when all atoms participate in the bonding. With the variation of fluorination degrees, semiconductor-metal transitions appear in the BC3 compounds and metal-semiconductor-metal transitions appear in the BC5 and BC7 sheet. Theoretical analyses find that pz orbital of boron atoms plays an important role in the electronic transition. Because of the rich electronic properties, this kind of fluorinated boron-carbon compound will become potential nanoelectronic materials and our results can play a role in guiding experiments.
Keywords: first principles boron-carbon compounds electronic properties
Keywords:first principles  boron-carbon compounds  electronic properties
本文献已被 CNKI 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号