氘化及氦离子注入对钪膜的表面形貌和相结构的影响

采用XRD, SEM, AFM等详细研究了氘化及氦离子注入对钪膜的表面形貌和相结构的影响. 结果表明,在单晶硅及抛光Mo基片上制备的钪膜均具有(002)晶面择优取向;钪膜氘化后表面会出现大量孔洞, 氘化后氘化钪(ScD₂)晶粒长大,但内部会残留少量未完全氘化反应的晶粒尺寸较小的 ScD_0.33/Sc晶粒;氦离子注入对钪及氘化钪的表面形貌没有明显影响, 离子注入的氦将在钪及氘化钪晶格中聚集成泡,导致氦离子注入层中的钪及氘化钪衍射峰向低角度偏移, 并且氦泡的聚集具有择优取向性.

The influence of deuteration and helium-implantation on the surface morphology and phase structure of scandium thick film

The effects of deuteration and helium-implantation on the surface morphology and phase structure of scandium (Sc) thick film are investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) methods. The preferred orientation of (002) crystal plane is observed for both films deposited on substrates of monocrystalline-silicon and polished-molybdenum. A great number of holes appear on surface after deuteration and the grain size of ScD₂ is bigger than that of Sc, whereas a few ScD_0.33/Sc grains with relatively small grain size retain inside crystal. The surface morphologies of scandium and scandium deuteride films are slightly affected by helium-implantation. The formation of helium bubbles with a preferred orientation in the crystal lattice of scandium and scandium deuteride, generated by the aggregation of ion-implanted helium, causes the corresponding diffraction peaks of scandium and scandium deuteride phase to shift towards smaller angles.