纳秒紫外重复脉冲激光烧蚀单晶硅的热力学过程研究

采用波长为355 nm的纳秒紫外重复脉冲激光对单晶硅片进行了盲孔加工实验, 观测了随脉冲增加激光烧蚀硅片的外观形貌和盲孔孔深、孔径的变化规律, 并对紫外激光辐照硅片的热力学过程进行了分析. 研究结果表明:紫外激光加工硅盲孔是基于热、力效应共同作用的结果, 热效应会使得硅材料熔化、气化甚至发生电离产生激光等离子体,为材料的去除提供条件;激光等离子体冲击波以及高温气态物向外膨胀会对熔化材料产生压力致使其向外喷射,为重复脉冲的进一步烧蚀提供了条件;力效应主要沿着激光传输的方向,垂直于硅表面,使得去除部位主要集中在孔的深度方向,达到较高的孔径比,实验观察孔径比可达8:1;此外,激光等离子体的产生也阻止了激光对靶面的作用,加之随孔深的增加激光发生散焦,使得烧蚀深度有一定的限制,实验观察烧蚀脉冲个数在前100个时加工效率较高.

Investigation of thermodynamic progress of silicon ablated by nanosecond uv repetitive pulse laser

The blind holes processing experiment is conducted on the silicon under the radiation of a 355 nm nanosecond UV repetitive pulse laser. With the increase of the laser pulse number, the variations of the silicon morphology,the depth and aperture of the blind holes are observed, and the thermodynamic process of UV laser irradiating silicon is analyzed. The results show that the formation of the blind silicon hole in the laser ablation process is due to the interaction between thermal effect and force effect. Thermal effect results in fusion, vaporization and even producing laser plasma by ionization in silicon, which is essential to the removal of the material. The molten material is compressed by the plasma shock wave and the expansion of the high-temperature gaseous material,and then ejection outward, which will benefit the further ablation; the force propagates along the laser transmission direction,perpendicular to the silicon surface, so the removal parts are distributed mainly along the depth direction of the hole, reaching a high aperture ratio, which is up to 8:1 in our experiments. In addition, the laser-induced plasma also prevents the effect of laser on the target surface, and with the increase of hole depth, laser defocusing occurs. The two aspects finally restrict the ablation depth. The results shows that in the process of laser irradiation on the material, the ablation efficiency is much higher when the former 100 pulses arrived than the sequent laser pulses.