Numerical model of multilayer organic light-emitting devices

A numerical model of multilayer organic light-emitting devices ispresented in this article. This model is based on thedrift-diffusion equations which include charge injection, transport,space charge effects, trapping, heterojunction interface andrecombination process. The device structure in the simulation isITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are twoheterojunctions which should be dealt with in the simulation. TheI--V characteristics, carrier distribution and recombinationrate of a device are calculated. The simulation results and measureddata are in good agreement.