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Effective method for preparation of oxide-free Ge2Sb2Te5 surface: An X-ray photoelectron spectroscopy study |
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| Authors: | Zheng Zhang Yong Lim Foo Yee-Chia Yeo Luping Shi |
| Affiliation: | a Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore b Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 119260, Singapore c Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore |
| Abstract: | Cleaning the surfaces of the as-deposited Ge2Sb2Te5 was studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). The mixed native oxides on the as-deposited Ge2Sb2Te5 surface can be easily removed by dipping Ge2Sb2Te5 in de-ionized water for 1 min, while the surface morphology remains unchanged after cleaning. Native oxides only re-grow after exposure to air for more than 4 min. Although dipping in water leads to a surface layer deficient in Ge and Sb, the surface composition of Ge2Sb2Te5 can recover to its stoichiometric value after annealing at 200 °C in vacuum. The phase remains amorphous at room temperature after dipping in water, and changes to fcc and hcp after annealing at 100 and 220 °C, respectively. |
| Keywords: | Surface cleaning XPS Phase change Ge2Sb2Te5 |
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