| 离子束刻蚀技术研究 |
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| 引用本文： | 崔芳,孙雨南. 离子束刻蚀技术研究[J]. 光学技术, 1993, 0(5) |
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| 作者姓名： | 崔芳 孙雨南 |
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| 作者单位： | 北京理工大学工程光学系 100081(崔芳)，北京理工大学工程光学系 100081(孙雨南) |
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| 摘 要： | 本文介绍了离子束刻蚀技术的原理,讨论了刻蚀速率与离子束流密度、离子能量和离子束入射角度的关系。实验结果与理论分析有较好的一致性。
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| 关 键 词： | 离子束 刻蚀 刻蚀速率 |
A study on ion beam etching technique |
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| Cui Fang Sun Yunan. A study on ion beam etching technique[J]. Optical Technique, 1993, 0(5) |
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| Authors: | Cui Fang Sun Yunan |
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| Affiliation: | Cui Fang Sun Yunan |
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| Abstract: | In this paper, the principles of ion beam etching technique are briefly described. The relations between the etching rate and the ion energy, and the density of ion beam current, and the incident angles of ion beam are discussed. And they are consistent with the theoretical analyses. |
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| Keywords: | ion beam etching etching rate |
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