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Beam analysis of scanning electron microscope according to the mirror effect phenomenon
Affiliation:1. Fraunhofer IWS Dresden, Winterbergstr. 28, 01277 Dresden, Germany;2. TU Dresden, Institute of Manufacturing Science and Engineering, George-Bähr-Str. 3c, 01062 Dresden, Germany;1. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany;2. EMAT, Universiteit Antwerpen, Groenenborgerlaan 171, 2020 Antwerpen, Belgium
Abstract:
In a scanning electron microscope the influence of electronic beam parameters on the electron-mirror images has been investigated. A simple theoretical model for scanning electron beam behavior in terms of beam and surface potentials is presented. The derived expression relates the scanning beam parameters and parameters of an irradiation region. Influence of a beam (the size and current), scanning potential, working distance, trapped charge and the irradiated area on electron mirror images are defined. Results show that the electron beam current has a considerable effect on the deduced mirror images in comparison with the other beam parameters. So it could be adapted for adjusting the phenomena of mirror effect. Moreover, the trapped charges have been calculated and the results examined in comparison with experimental data.
Keywords:Electron optics  Scanning electron microscope  Electron beam current  Electron mirror images  Insulator charging
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