Implications in the use of sputtering for layer removal: the system Au on Si |
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| Authors: | P Blank K Wittmaack |
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| Institution: | 1. Gesellschaft für Strahlen- und Umweltforschung mbH Physikalisch-Technische Abtei1ung , Neuherberg, D-8042, FR Germany;2. lnstitut für Metal 1forschung, Technische Universit?t Berlin , Joachimstaler Straβe 31/32, D-1000, Berlin 15, FR Germany;3. Gesellschaft für Strahlen- und Umweltforschung mbH Physikalisch-Technische Abtei1ung , Neuherberg, D-8042, FR Germany |
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| Abstract: | Au films deposited on Si substrates have been sputtered by 20 and 100 keV Ar bombardment, respectively. Bombardment-induced intermixing of Au and Si was observed at film thicknesses considerably larger than the projectile range. Due to radiation-enhanced diffusion, the partial sputtering yield of Au from Si-Au alloys decreases with increasing fluence. Complete removal of Au from Si is impossible if Ar ions are used for sputtering. |
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