Annealing of arsenic-and antimony-implanted silicon single crystals using A CW xenon arc lamp |
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| Authors: | A Nylandsted Larsen L Correra |
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| Institution: | 1. Institute of Physics, University of Aarhus , DK-8000 , Aarhus C , Denmark;2. Istituto LAMEL, C.N.R. , Via dei Castagnoli 1, I-40126 , Bologna , Italy |
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| Abstract: | Abstract Continuous, incoherent light from a xenon arc lamp has been used to anneal radiation damage in <100> silicon single crystals produced by implantation of 30?keV arsenic or antimony ions to doses between 1×1015 cm?2 and 1×1016 cm?2. The recrystallized layers have been characterized by Rutherford-backscattering spectroscopy, ion-channeling, Transmission Electron Microscopy, and sheet-resistivity measurements. |
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