A Bistable Defect in InP |
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| Authors: | V V Peshev |
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| Institution: | (1) Yurga Technological Institute, Tomsk Polytechnic University, Tomsk, Russia |
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| Abstract: | Point defects in n-indium phosphide were studied by deep-level transient spectroscopy (DLTS). A radiation-induced bistable defect is found to form under irradiation of a space-charge region of n-InP Shottky-barrier diodes. The transformations of the defect configuration stimulated by heating, illumination, and current flow are studied.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 80–84, April, 2005. |
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