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Effect of solvent additives on bulk heterojunction morphology of organic photovoltaics and their impact on device performance
Authors:Won Tae Choi  Jiyun Song  Jongkuk Ko  Yeongseon Jang  Tae-Hwan Kim  Young-Soo Han  Jeewoo Lim  Changhee Lee  Kookheon Char
Institution:1. The National Creative Research Initiative Center for Intelligent Hybrids, The WCU Program of Chemical Convergence for Energy and Environment, School of Chemical and Biological Engineering, Seoul National University, Seoul, 151-744 Korea;2. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 151-744 Korea;3. HANARO Center, Korea Atomic Energy Research Institute, Daejeon, 305-353 Korea
Abstract:Morphology of the active layer in an organic photovoltaic (OPV) device is known to have a significant impact on the device performance. It is, however, difficult to characterize nanoscale morphologies in detail, especially at the ensemble level. Herein, we report the utilization of small angle neutron scattering (SANS) to investigate variations in the nanoscale morphologies of the active layer of poly(3-hexylthiophene-2,5-diyl):6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction OPV depending on the composition of casting solvent. Both the power law and the poly hard sphere model were utilized to characterize the state of the donor and acceptor components, respectively, from the obtained SANS data. Furthermore, the relationship between the nanoscale morphology and device performance is outlined. It was found that the use of 2-chlorophenol, a poor solvent for P3HT and, at the same time, a very good solvent for PCBM, leads to nanomorphology featuring ordered, highly crystalline P3HT and small (15.2 nm) PCBM domains. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016, 54, 128–134
Keywords:neutron scattering  additives  conducting polymers  Fullerenes  interpenetrating networks (IPN)  small angle neutron scattering (SANS)  P3HT:PCBM
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