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Epitaxial growth and electrical transport properties of La0.5Sr0.5Co03 thin films prepared by pulsed laser deposition
Authors:Meiya Li  Guangcheng Xiong  Zhonglie Wang  Shoushan Fan  Qingtai Zhao  Kuixun Lin
Institution:(1) Science Center, Shantou University, 515063 Shantou, China;(2) Department of Physics, Peking University, 100871 Beijing, China;(3) Microelectronic Institute, Peking University, 100871 Beijing, China;(4) Department of Physics, Tsinghua University, 100084 Beijing, China
Abstract:Epitaxial growth of the La0.5Sr0.5 3(LO) thin films has been realized on Lin3, SrTiC3 and MgO substrates by pulsed laser deposition. The epitaxial growth behavior and the electrical transport properties of these films were studied systematically. The temperature dependencies of the resistivity of the film have been determined. Studies indicate that close dependencies exist between the crystal structures and the electrical transport properties of the epitaxial LSCO films, and that the epitaxial thin films are of low resistivity and metallic conductive features. The epitaxial films deposited on the LaA103 substrates at about 700 °C possess the optimal properties compared with the others. Discussions of the dependencies and the mechanisms of the epitaxial structures on the electrical transport properties of the LSCO films have been made. Project supported by the National Natural Science Foundation of China (Grant No. 19574003 and No. 19674001).
Keywords:epitaxial growth  pulsed laser deposition  La0  5Sr0  5Co03 thin film  electrical transport properties
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