Acceptor doping of single-walled carbon nanotubes by encapsulation of zinc halogenides |
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| Authors: | M. V. Kharlamova L. V. Yashina A. A. Volykhov J. J. Niu V. S. Neudachina M. M. Brzhezinskaya T. S. Zyubina A. I. Belogorokhov A. A. Eliseev |
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| Affiliation: | 1.Department of Materials Science,Moscow State University,Moscow,Russia;2.Chemistry Department,Moscow State University,Moscow,Russia;3.Rare Metals Institute “GIREDMET”,Moscow,Russia;4.Department of Materials Science and Engineering and A.J. Drexel Nanotechnology Institute,Drexel University,Philadelphia,USA;5.ALBA-CELLS,Barcelona,Spain;6.Institute of Problems of Chemical Physics RAS,Moscow Region,Russia |
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| Abstract: | ![]()
To modify the electronic properties of single-walled carbon nanotubes (SWCNTs), ZnX2@SWCNT (X = Cl, Br, I) nanostructures were prepared by capillary filling of 1.4–1.6 nm single-walled carbon nanotubes (SWCNT) with zinc halogenide melts. The loading factor is estimated as 30% for ZnCl2 and approximately 60% for ZnBr2 and ZnI2. Well-ordered 1D crystals were observed by TEM only for ZnI2@SWCNT. We propose two possible atomic structures of the 1D crystals, (Zn4I7) n and less stable (Zn4I9) n . According to the optical absorption and photoemission data, there is a charge transfer from the nanotube to the filler for all ZnX2@SWCNT nanostructures. The results of the DFT PW-GGA modeling indicate that the acceptor properties correspond to (Zn4I9) n only. |
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