CMOS电路低温特性及其仿真

本文采用0.25微米工艺制备了CMOS器件和电路,通过对300K、77K和4K温度下器件和电路特性的测量,研究了工作温度降低对CMOS电路特性的影响.通过讨论MOSFET器件和互连线主要特性参数随温度的变化情况,修改了常温CMOS BSIM3模型以及互连线参数,建立了77K、4K温度下的低温电路仿真模型.利用上述新建立的低温电路仿真模型对CMOS电路进行仿真,并将仿真结果与实际测量结果比较,获得了比较一致的结果.研究表明在4K温度下CMOS电路的工作性能大约有50%到60%的改善.

CRYOGENIC TEMPERATURE CHARACTERISTICS AND SIMULATION OF CMOS CIRCUITS

Short channel MOSFET devices andcircuits basedon a commercial 0.25 m CMOS process have been fabricated and tested at cryogenic temperature. By taking into account of the main parameter variations of discrete MOSFET devices and interconnect wires, we have modified the room temperature CMOS BSIM3 model and established cryogenic temperature CMOS models. We have simulated the MOSFET devices and 31-stage ring oscillators by using the established cryogenic temperature models. The simulations fit the experimentalresults roughly well. The ring oscillator'speriodhas been reduced at cryogenic temperature, 50%~60% improvement of the circuit performance can be obtained at 4K.