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Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions |
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| Authors: | K. S. A. Butcher Afifuddin T. L. Tansley N. Brack P. J. Pigram H. Timmers K. E. Prince R. G. Elliman |
| Affiliation: | a Department of Physics, Macquarie University, North Ryde, NSW 2109, Australia b Centre for Materials and Surface Science, La Trobe University, Melbourne, Vic. 3086, Australia c School of Physics, University of New South Wales at the Australian Defence Force Academy, Canberra, ACT 2600, Australia d Australian Nuclear Science and Technology Organisation, Private Mail Bag 1, Menai, NSW 2234, Australia e Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 2600, Australia |
| Abstract: | Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200 MeV heavy ions of 197Au. Despite this 2–5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling. |
| Keywords: | Gallium nitride Argon ion milling Ultra-high vacuum |
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