高质量纳米ZnO薄膜的光致发光特性研究

报道了利用低压-金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜.x射线衍射结果表明，纳米ZnO薄膜具有六角纤锌矿多晶结构.室温下观察到一束强的紫外(3.26 eV) 光致发光和很弱的深能级发射.根据激子峰的半高宽度与温度的关系确定了激子-纵向光学声子（LO）的耦合强度（ГLO）.由于量子限域效应使ГLO减少较多. 关键词： 光致发光 热氧化 激子 纳米ZnO薄膜

A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films

In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is reduced greatly due to the quantum confinement effect.