Compton scattering of 59.5 keV gamma rays from p-Si sample in an external electric field

This study is related to Compton scattering of photons from a p-Si sample whose surface charge density distributions are changed by an external electric field. The external electric field intensity in the range 0-75 kV/m was used to change the surface charge density distributions of the sample. The sample surface perpendicular to the electric field was selected as the scattering surface. The p-Si sample was bombarded by 59.5 keV γ-photons emitting from an Am-241 point source. The Compton scattered photons at an angle of 90^o were detected by an Si(Li) detector. The Compton scattering intensity suddenly increased with the application of the electric field since the applied electric field distorts both the negatively charged scattering center (free electron, bound electron, ionized acceptor) and the positively charged scattering center (hole) and their momentum distribution in the sample. There is a good third-order polynominal relation between the Compton scattering intensity and the increasing (or decreasing) electric field intensity. The results show that the positively charged scattering centers behave like negatively charged scattering centers, but the latter are slightly more effective than the former in the Compton scattering of γ-rays from the sample in the electric field.