Preparation,Crystal Structure,Physical Properties,and Electronic Band Structure of TlTaS3

TlTaS₃ was prepared by applying a sequence of two melting processes with mixtures of Tl₂S, Ta, and S having different molar metal to sulphur ratios. TlTaS₃ crystallises in space group Pnma with a = 9.228(3)Å, b = 3.5030(6)Å, c = 14.209(3)Å, V = 459.3(2)ų, Z = 4. The structure is closely related to the NH₄CdCl₃‐type. Characteristic features of the structure are chains of edge‐sharing [Ta(+5)S₄S_2/2]₂ double octahedra running along [010]. These columns are linked by Tl⁺ ions. The Tl⁺ ion is surrounded by eight S^2— anions to form a distorted bi‐capped trigonal prism. The Tl⁺ ions are shifted from the centre of the trigonal prism toward one of the rectangular faces. This is discussed in context with other isostructural compounds. TlTaS₃ is a semiconductor. The electronic structure is discussed on the base of band structure calculations performed within the framework of density functional theory.