The effects of thermal annealing in NH3 -ambient on the p-type ZnO films |
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| Authors: | Eun Soo Jung Hong Seung Kim Hyung Koun Cho Jin Hyeok Kim |
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| Institution: | aMajor of Semiconductor Physics, Korea Maritime University, Busan 606-791, Republic of Korea;bMaterial Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;cMaterial Science, Chonnam National University, Gwangju, 500-757, Republic of Korea |
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| Abstract: | Thermal annealing in NH3-ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 1015–1017/cm3 with thermal annealing in NH3-ambient. The activation thermal annealing process was needed at 800  C under N2-ambient to obtain p-type ZnO. The electrical properties of the p-type ZnO showed a hole concentration of 1.06×1016/cm3, a mobility of 15.8 cm2/V s, and a resistivity of 40.18 Ω cm. The N-doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. The incorporation of nitrogen was confirmed in the SIMS spectra. |
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| Keywords: | ZnO p-type doping NH3 Annealing |
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