| 基于间接跃迁模型的p+-GaAsSb费米能级研究 |
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| 引用本文： | 高汉超,尹志军,程伟,王元,许晓军,李忠辉.基于间接跃迁模型的p+-GaAsSb费米能级研究[J].发光学报,2013,34(8):1057-1060. |
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| 作者姓名： | 高汉超 尹志军 程伟 王元 许晓军 李忠辉 |
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| 作者单位： | 南京电子器件研究所 微波毫米波单片集成和模块电路重点实验室, 江苏 南京 210016 |
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| 摘 要： | 重p型掺杂GaAsSb广泛应用于InP HBT基区材料,重掺杂影响GaAsSb材料的带隙和费米能级等重要参数,这些参数对设计高性能HBT起着关键作用。本文通过间接跃迁模型研究了p+-GaAsSb材料的荧光性质,以及费米能级与Sb组分的关系。由于费米能级与空穴有效质量mh和空穴态密度nh存在函数关系,我们通过荧光测量并计算了空穴有效质量mh和空穴态密度nh,研究结果表明mh和nh共同主导了费米能级的变化。
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| 关 键 词： | GaAsSb HBT 费米能级 |
| 收稿时间： | 2013-04-15 |
Study of Fermi Level of p+-doped GaAsSb by Indirect Transition Model |
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| GAO Han-chao,YIN Zhi-jun,CHENG Wei,WANG Yuan,XU Xiao-jun,LI Zhong-hui.Study of Fermi Level of p+-doped GaAsSb by Indirect Transition Model[J].Chinese Journal of Luminescence,2013,34(8):1057-1060. |
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| Authors: | GAO Han-chao YIN Zhi-jun CHENG Wei WANG Yuan XU Xiao-jun LI Zhong-hui |
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| Institution: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratorys, Nanjing Electronic Device Institute, Nanjing 210016, China |
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| Abstract: | Heavily p+-doped GaAsSb is extensively applied in InP HBT base material, it influences many important parameters, such as band gap and Fermi level. These parameters are key factors for the design of high performance HBT devices. This work studied photoluminescence of p+- GaAsSb in the model of indirect transition, especially the relationship between GaAsSb Fermi level and Sb composition. The hole effective mass (mh) and hole density (nh) were measured and calculated because Fermi level, mh and nh had functional relationship. It is found that mh and nh result in the change of Fermi level. |
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| Keywords: | GaAsSb HBT Fermi level |
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