Diffusion Phenomena during the heteroepitaxy of Ternary Compounds of the Type (AxB1–x)1–ΔC1+Δ

In heteroepitaxy of ternary compound systems of the type (A_xB_1–x)_1–ΔC_1+Δ has to be taken into account the occurrence of complex diffusion phenomena independent on the epitaxial method applied which cannot be considered within a quasi-binary system AC–BC. Based on the statements of thermodynamics of irreversible processes a model for the calculation of diffusion profiles, regarding the influence of the compound crystal composition x on the deviation from stoichiometry Δ, is presented. Concentration profiles calculated in accordance to this model show typical maxima and minima. – Tellurium distribution profiles determined on heterostructures of the type (Pb_1–xSn_x)_1–ΔTe_1+Δ /PbTe got by electron-probe microanalysis may be explained qualitatively within the presented model. With the EBIC-method additional p-n junctions at the position of the extrema in the tellurium distribution were found.