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Effects of strain field in nitrogen-mediated Co film growth on Cu(0 0 1): Segregation and electronic structure change |
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| Authors: | Daiichiro Sekiba Shunsuke Doi Kan Nakatsuji Fumio Komori |
| Affiliation: | Institute for Solid State Physics, University of Tokyo, Kashiwanoha 5-1-5, Kashiwashi, Chiba 277-8581, Japan |
| Abstract: | Growth modes of Co thin films on the both N-saturated and partially N-adsorbed Cu(0 0 1) surfaces are studied in detail. From results of the STM and XPS measurements, segregation of N atoms depending on the Co island size is concluded. This new type of atom segregation is explained by means of a lattice strain of the substrate due to the small Co island formation. A novel core-level shift of N 1s during the Co film growth is also reported. A possible influence of the lattice strain to the electronic structure of the surfactant is discussed. |
| Keywords: | Models of surface kinetics Low energy electron diffraction (LEED) Ion implantation methods X-ray photoelectron spectroscopy Scanning tunneling microscopy Epitaxy Growth Nanopatterning Surface segregation Surface stress Surface tension Cobalt Copper Nitrogen atom Thin film structures Metal–metal interface Metal–metal magnetic thin film structures |
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