Semiconductor-metal phase transition under a strain induced by a spherical indenter |
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| Authors: | V V Kaminskii S Lanyi |
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| Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) Institute of Physics, Slovak Academy of Sciences, 84228 Bratislava, Slovakia |
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| Abstract: | A semiconductor-metal phase transition is produced in samarium monosulfide under the action of the pressure of a spherical
indenter in the region of quasiuniaxial compression of the sample material under the indenter and investigated. It is shown
that the phase transition occurs when the decrease in the volume of SmS under the action of the applied field reaches a critical
value of 4–5% at T=300 K. The temperature dependence of the critical volume decrease is recorded in the range 280–440 K.
Zh. Tekh. Fiz. 68, 53–57 (March 1998) |
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