| 用RHEED强度振荡锁相外延控制Ge/Si超晶格的生长 |
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| 引用本文： | 陈可明,金高龙,盛篪,周国良,蒋维栋,张翔九,俞鸣人.用RHEED强度振荡锁相外延控制Ge/Si超晶格的生长[J].物理学报,1990,39(3):408-415. |
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| 作者姓名： | 陈可明 金高龙 盛篪 周国良 蒋维栋 张翔九 俞鸣人 |
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| 作者单位： | 复旦大学表面物理实验室,上海,200433 |
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| 基金项目： | 国家自然科学基金资助的课题 |
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| 摘 要： | 观察了Ge,Ge/Si交替外延时的反射式高能电子衍射(RHEED)强度振荡现象,并由此研究了Si(100)和Si(111)衬底上分子束外延Ge,Ge/Si超薄叠层的生长行为和生长特性。利用RHEED强度振荡,锁相控制生长了Ge(2ML)/Si(2ML),Ge(4ML)/Si(4ML)超薄超晶格。
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| 收稿时间： | 5/8/1989 12:00:00 AM |
PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS |
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| CHEN KE-MING,JIN GAO-LONG,SHENG CHI,ZHOU GUO-LIANG,JIANG WEI-DONG,ZHANG XIANG-JIU and YU MING-REN.PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS[J].Acta Physica Sinica,1990,39(3):408-415. |
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| Authors: | CHEN KE-MING JIN GAO-LONG SHENG CHI ZHOU GUO-LIANG JIANG WEI-DONG ZHANG XIANG-JIU and YU MING-REN |
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| Abstract: | Reflection High Energy Electron Diffraction (RHEED) intensity oscillations during the growth of alternating Ge and Si layers were observed, and the growth behavior during molecular beam epitaxy of Ge/Si ultra-thin multi-layered structures on Si(l00) and Si(lll) substrates has been studied. By using RHEED intensity oscillation, we have fabricated the Ge(2ML)/Si(2ML) and Ge(4ML)/Si(4ML) ultra-thin superlattices by phase-locking method. |
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