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Siliconization for Wall Conditioning in the HL-2A Tokamak
引用本文:CAO Zeng CUI Chenghe CAI Xiao GAO Xiaoyan DUAN Xuru PAN Yudong LI Quang. Siliconization for Wall Conditioning in the HL-2A Tokamak[J]. 核工业西南物理研究院年报(英文版), 2005, 0(1): 43-44
作者姓名:CAO Zeng CUI Chenghe CAI Xiao GAO Xiaoyan DUAN Xuru PAN Yudong LI Quang
摘    要:


关 键 词:硅化 流量改变 密度极限 HL-2A 托卡马克装置

Siliconization for Wall Conditioning in the HL-2A Tokamak
Abstract:
The sputtering of impurities is caused by the interactions between plasma and the first wall, and the recycling of the gas affects the particle and energy transport of plasmas with a complicated mechanism in plasma operation. It is important for present tokarnaks to achieve a good confinement and high performance plasmas by means of controls of the vacuum condition, usage of low Z materials, control of the recycling of neutral particles and suppressions of the appearances and yield of impurities. For higher plasma parameters, some of the first wall of HL-2A is covered with graphite materials and carbon fiber tiles. Hence the studies on the in-situ coating application and development, and the interactions between the coating film and plasma are needed to effectively control the impurity, improve plasma confinement and achieve high performance plasma.
Keywords:Siliconization Discharge improvement Density limits
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