Bipolar resistive switching effect and mechanism of solution-processed orthorhombic Bi2SiO5 thin films |
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| Institution: | 1. Center of Experimental Teaching for Common Basic Courses, South China Agricultural University, Guangzhou, 510642, China;2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China;3. Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China;4. Department of Physics and Optoelectronics, College of Electronics and Information Engineering, Guangdong Ocean University, Zhanjiang, 524088, China |
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| Abstract: | Orthorhombic Bi2SiO5 thin films with dense surface were synthesized by using a chemical solution deposition method. The crystallized films were first utilized to implement resistive memory cells with Pt/Bi2SiO5/Pt sandwich architecture. It exhibited outstanding switching parameters including concentrated distributions of low and high resistance states, uniform switching voltages, cycling endurance, and long retention. Furthermore, the model of formation and rupture of conductive filaments consisted of oxygen vacancies was used to well explain resistive switching behavior. The results revealed that the solution-processed Bi2SiO5 thin film devices have great potential for forefront application in nonvolatile memory. |
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| Keywords: | Resistive switching Conductive filament |
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