Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy |
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| Authors: | C.E. Gonzalez S.C. Sharma N. Hozhabri D.Z. Chi S. Ashok |
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| Affiliation: | (1) Department of Physics, Box 19059, The University of Texas at Arlington, Arlington, TX 76019, USA, US;(2) National Semiconductor, Arlington, Texas 76017, USA, US;(3) Department of Engineering Science and Mechanics, Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park, Pennsylvania, PA 16802, USA, US |
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| Abstract: | Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500 °C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5×1017 cm-3. Received: 4 September 1998 / Accepted: 5 January 1999 / Published online: 28 April 1999 |
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| Keywords: | PACS: 78.70 61.70 81.40 |
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