Quasi-monocrystalline silicon for thin-film devices |
| |
Authors: | TJ Rinke RB Bergmann JH Werner |
| |
Institution: | Universit?t Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany (FAX: +49-711/685-7206, E-mail: titus.rinke@ipe.uni-stuttgart.de), DE
|
| |
Abstract: | Thermal crystallization of a double layer porous Si film creates a monocrystalline Si film with a thin separation layer between
the Si film and the reusable starting wafer. The process enables transfer of thin monocrystalline Si films to foreign substrates,
whereby devices may be formed before or after separation of the film. Sub-micrometer thick films are almost compact, while
films with a thickness of several μm contain voids, and are therefore termed “quasi-monocrystalline”. Internal voids strongly
enhance optical absorption by light scattering. The hole mobility is 78 cm2 V-1 s-1 at a p-type starting wafer resistivity of 0.05 Ω cm.
Received: 24 March 1999 / Accepted: 29 March 1999 / Published online: 5 May 1999 |
| |
Keywords: | PACS: 78 66Db 72 20 Fr 72 80 Cw |
本文献已被 SpringerLink 等数据库收录! |
|