| ZnCdse－ZnSe多量子阱中的激子发光 |
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| 引用本文： | 张吉英,范希武,杨宝均,关郑平,吕有明,申德振. ZnCdse－ZnSe多量子阱中的激子发光[J]. 发光学报, 1994, 0(2) |
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| 作者姓名： | 张吉英 范希武 杨宝均 关郑平 吕有明 申德振 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 基金项目： | 国家“863”计划光电子主题，国家“攀登计划”，中国科学院长春物理所激发态物理开放实验室资助 |
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| 摘 要： | 在７７－３００Ｋ温度下研究了Ｚｎ（１－ｘ）ＣｄｘＳｅ－ＺｎＳｅ多量子阱（ＭＱＷｓ）的光致发光特性．首次在７７Ｋ，Ａｒ离子激光器的４５７．９ｎｍ激发下，在Ｚｎ（０．６８）Ｃｄ（０．３２）Ｓｅ－ＺｎｓｅＭＱＷｓ中观测到５个发光带，其中三个发光带被归因于不同的激子发射：即ｎ＝１重空穴（ＨＨ）激子；ｎ＝ｌ轻－重空穴（ＬＨ）激子和ｎ＝ＩＨＨ激子同时发射两个纵光学声子的复合发光，并且，；ｎ＝１ＨＨ激子发光可延续至室温．
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| 关 键 词： | ZnCdse－ZnseMQWs，激子发光 |
EXCITONIC EMISSION IN ZnCdSe-ZnSe MQWs |
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| Zhang Jiying,Fan Xiwu,Yang Baojun, Guan Zhengping,Lu Youming,Shen Dezhen. EXCITONIC EMISSION IN ZnCdSe-ZnSe MQWs[J]. Chinese Journal of Luminescence, 1994, 0(2) |
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| Authors: | Zhang Jiying Fan Xiwu Yang Baojun Guan Zhengping Lu Youming Shen Dezhen |
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| Abstract: | Zn1-xCdxSe-ZnSe multiple quantum wells (MQWs ) were grown on GaAs (100) substrate by MOCVD. Their photoluminescence (PL) was studied at temperature between 77K-300K. We have observed five emission bands in Zn0.68Cd0.32Se-ZnSe MQWs under the 457. 9um line of an Ar ion laser excitation at 77K for the first time. The three of these bands are attributed to different exciton emission, the n=1 heavy-hole (HH) exciton transition, the n=1 light-heavy hole (LH) exciton transiton and n=1 HH exciton transition with the emission of two LO phonons, respectively. |
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| Keywords: | ZnCdSe-ZnSe MQWs excitonic emission |
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