Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method |
| |
Authors: | Duy-Thach PhanGwiy-Sang Chung |
| |
Institution: | School of Electrical Engineering, University of Ulsan, San 29, Mugeodong, Namgu, Ulsan 680-749, Republic of Korea |
| |
Abstract: | Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed. |
| |
Keywords: | ZnO RF sputtering Sol-gel 3C-SiC buffer layer |
本文献已被 ScienceDirect 等数据库收录! |