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Features of radiative transitions of charge carriers in Al x Ga1−x As and GaAs x P1−x p-n-structures |
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| Authors: | L. A. Kosyachenko M. M. Slyotov D. V. Galchenkov V. I. Maior |
| Affiliation: | (1) Chernovtsy University, 2, Kotsyubinskii Str., 274012 Chernovtsy, Ukraine;(2) Electronic Materials and Technology, Joint-Stock Association, Russia |
| Abstract: | |
| Keywords: | light-emitting diode electroluminescence radiation by hot charge carriers |
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